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Vce limits of the transistor that must be observed for reliable operation. Be the first to know about our newest products, specials and promotions. Characteristic symbol rating unit collectorbase voltage collectoremitter voltage emitterbase voltage collector current dc. Designed for general purpose amplifier and low speed switching applications. Order this document motorola by mj10012d semiconductor technical data mj10012 mjh10012 npn. Mje power transistors and mj power transistors, mj, mje, transistor. Bd181 bd182 bd183 comset semiconductors bd181, bd182 and bd183 are silicon npn transistors intended for a wide variety of high power applications. Mj10012 datasheet pdf npn silicon power darlington.
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The result is a transistor which boasts exceptionally high gain. Mediumpower complementary silicon transistors for use as output devices in complementary general. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features high safe operating area for low distortion complementary designs high dc current gain these devices are pb. Buy transistor mj2955 to3 pnp silicon power 60 volt toggle navigation jameco. Full text of motorola databooks 1987 motorola bipolar. All jaycar stores remain closed until further notice in accordance with the new zealand government instructions. Notice mospec reserves the rights to make changes of the content herein the document anytime without notification. However, sgsthomson microelectronics assumes no responsability for the consequences of use of such information.
Inchange semiconductorisc product specificationisc website. Mediumpower complementary silicon transistors for use as output devices in complementary general purpose amplifier applications. We have the broadest line of bipolar power transistors in the industry. The device is manufactured in planar technology with base island layout. Pinning pin description 1 emitter 2 base 3 collector, connected to case fig. In the case of a transistor, that table of maximum ratings is probably the single. We are now able to process your orders online and deliver essential tech to you.
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As you can see much dust and wear on box but product itself has aged well. Safe operating area curves indicate i c vce limits of the transistor that must be observed for reliable operation, i. The jacobs ladder is the old september 1995 silicon chip design using a modified electric fence circuit built around a 555 timer and mj10012 transistor running a 12v. The mj10012 and mjh10012 are highvoltage, highcurrent darlington. Npn transistor is a semi conductor device made from semi conductor materials which has 3 pins base, collector, emmiter forming 2 junctions namely be and ce npn transistor. Mj10012 npn silicon power darlington transistor to3 type. Complementary silicon power transistors the mj15001 and mj15002 are power transistors designed for high power audio, disk head positioners and other linear applications. Mj10012 datasheet, equivalent, cross reference search. However, sgsthomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Mj10012 datasheet, mj10012 pdf, mj10012 data sheet, datasheet, data sheet, pdf, boca semiconductor corporation, npn silicon power darlington transistors. Complementary npnpnp silicon power bipolar transistors the mjl4281a and mjl4302a are powerbase power transistors for high power audio. Rd01mus1 silicon mosfet power transistor 520mhz,1w. Mj10012 npn silicon power darlington transistor by moto. Ld6806xxxh devices show a highohmic state at the output pin, while the ld6806xxxp contains a pulldown switching transistor.